2005. 3. 14 1/2 semiconductor technical data KTD718B triple diffused npn transistor revision no : 1 high power amplifier application. features recommended for 45 50w audio frequency amplifier output stage. complementary to ktb688b. maximum rating (ta=25 ) 1. base 2. collector (heat sink) 3. emitter to-3p(n)-e c g l k r a d b h f i d pp t j q 1 2 3 m n o e a millimeters dim b c d d e f g h i j k l o n p q m 19.90 0.20 2.00 0.20 1.00 0.20 3.00 0.20 3.80 0.20 3.50 0.20 13.90 0.20 12.76 0.20 23.40 0.20 1.5+0.15-0.05 16.50 0.30 1.40 0.20 13.60 0.20 9.60 0.20 5.45 0.30 r t 0.60+0.15-0.05 15.60 0.20 + _ 4.80 0.20 + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ 3.20 0.10 + _ 18.70 0.20 + _ electrical characteristics (ta=25 ) note : h fe classification r:55 110, o:80 160 characteristic symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5 v collector current i c 10 a base current i b 1 a collector power dissipation (tc=25 ) p c 80 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =120v, i e =0 - - 10 a emitter cut-off current i ebo v eb =5v, i c =0 - - 10 a collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 120 - - v dc current gain h fe (note) v ce =5v, i c =1a 55 - 160 collector-emitter saturation voltage v ce(sat) i c =6a, i b =0.6a - - 2.0 v base-emitter voltage v be v ce =5v, i c =5a - - 1.5 v transition frequency f t v ce =5v, i c =1a - 12 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 170 - pf
2005. 3. 14 2/2 KTD718B revision no : 1 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta 10 dc current gain h fe 0.3 0.1 0.03 0.01 collector current i (a) c h - i i - v ce collector-emitter voltage v (v) 0 c collector current i (a) 0.01 voltage v (v) ce(sat) 0.3 0.1 0.03 0.01 collector current i (a) c v - i 0 cce 2 4 6 8 10 12 14 2 4 6 8 10 12 common emitter tc=25 c 400 300 200 100 50 i =20ma 0 b fe c 1310 30 50 100 300 500 1k common emitter v =5v ce tc=100 c tc=25 c tc=-25 c ce(sat) c collector-emitter saturation 1310 0.03 0.05 0.1 0.3 0.5 1 common emitter i /i =10 c b tc = 100 c tc=25 c tc=-25 c p (w) 40 80 120 160 200 240 20 40 60 80 100 ta=tc infinite heat sink 300 x 300 x 2mm al heat sink 200 x 200 x 2mm al heat sink 100 x 100 x 2mm al heat sink no heat sink 1 2 3 4 5 1 2 3 4 5 safe operating area collector-emitter voltage v (v) 1 3 10 30 c 0.1 collector current i (a) ce 100 300 0.3 1 3 10 30 single nonrepetitive pulse tc=25 c curves must be derated linearly wiht increase in temperature. * i max(pulsed) c c i max(continuous) * t=1ms 10ms 100ms * * * 500ms dc operatio n tc=25 c * v max. ceo
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